Capacité différentielle du domaine de charge spatiale d'une électrode semi-conductrice en cas de dégénérescence volumique des principaux porteursLUNICHEV, V. N.Èlektrohimiâ. 1989, Vol 25, Num 1, pp 137-139, issn 0424-8570Article

A quantitative expression for partial Fermi level pinning at semiconductor/redox electrolyte interfacesVAN MEIRHAEGHE, R. L; CARDON, F; GOMES, W. P et al.Journal of electroanalytical chemistry and interfacial electrochemistry. 1985, Vol 188, Num 1-2, pp 287-291, issn 0022-0728Article

Variations spectrales de la photocapacité de l'interface ZnO-électrolytePANOSYAN, ZH. R; POGOSYAN, A. A; MELIKSETYAN, V. A et al.Fizika tverdogo tela. 1985, Vol 27, Num 6, pp 1866-1868, issn 0367-3294Article

Les spectres d'électroluminescence dans le système silicium-dioxyde de silicium-électrolyteBARABAN, A. P; KONOROV, P. P; KRUCHININ, A. A et al.Èlektrohimiâ. 1984, Vol 20, Num 4, pp 539-542, issn 0424-8570Article

A new model for the semiconductor-electrolyte interface and the origin of Mott-Schottky data dispersionBRAUN, C. M; FUJISHIMA, A; HONDA, K et al.Surface science. 1986, Vol 176, Num 1-2, pp 367-376, issn 0039-6028Article

Self-consistent density functional approach to a metal/electrolyte solution interfaceKORNYSHEV, A. A; PARTENSKII, M. B; SCHMICKLER, W et al.Zeitschrift für Naturforschung. Teil A : Physik, physikalische Chemie, Kosmophysik. 1984, Vol 39, Num 11, pp 1122-1133, issn 0340-4811Article

Surface states induced by metal atoms at the Si/electrolyte interfaceCHAZALVIEL, J.-N; STEFENEL, M; TRUONG, T. B et al.Surface science. 1983, Vol 134, Num 3, pp 865-885, issn 0039-6028Article

Minority carrier diffusion length mapping in silicon wafers using a Si-electrolyte-contactLEHMANN, V; FÖLL, H.Journal of the Electrochemical Society. 1988, Vol 135, Num 11, pp 2831-2835, issn 0013-4651Article

Electrochemical etching process to tune the diameter of arrayed deep pores by controlling carrier collection at a semiconductor―electrolyte interfaceSATO, Hirotaka; YAMAGUCHI, Takuya; ISOBE, Tetsuhiko et al.Electrochemistry communications. 2010, Vol 12, Num 6, pp 765-768, issn 1388-2481, 4 p.Article

CURRENT PHOTORESPONSE OF AN ELECTROLYTE-ZINC SELENIDE JUNCTIONLEMASSON P; GAUTRON J.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 53; NO 1; PP. 303-309; ABS. FRE; BIBL. 16 REF.Article

Efficient electroluminescence of porous siliconBELYAKOV, L. V; GORYACHEV, D. N; SRESELI, O. M et al.Semiconductors (Woodbury, N.Y.). 1993, Vol 27, Num 11-12, pp 999-1001, issn 1063-7826Article

Propriétés d'injection du contact électrolyte-germanate de bismuthKATSAVETS, N. I; KUDRIK, I. E; LEONOV, E. I et al.Žurnal tehničeskoj fiziki. 1985, Vol 55, Num 12, pp 2372-2376, issn 0044-4642Article

Surface recombination at semiconductor electrodes. I: Transient and steady-state photocurrentsPETER, L. M; LI, J; PEAT, R et al.Journal of electroanalytical chemistry and interfacial electrochemistry. 1984, Vol 165, Num 1-2, pp 29-40, issn 0022-0728Article

Photoconductivity of TlSbS₂ measured at the solid/electrolyte interfaceHÜSSER, O. E; HULLIGER, F; VON KÄNEL, H et al.Journal of the Electrochemical Society. 1987, Vol 134, Num 2, pp 477-481, issn 0013-4651Article

Influence des centres profonds sur les caractéristiques d'intensité-capacité de l'interface semi-conducteur/électrolyteSARKISYAN, A. G; ARUTYUNYAN, V. M; SHAKHNAZARYAN, G. EH et al.Èlektrohimiâ. 1988, Vol 24, Num 4, pp 515-521, issn 0424-8570Article

Photosensibilité des systèmes semiconductoeurs II-IV-V2-électrolyteRUD, YU. V; TAIROV, M. A.Fizika i tehnika poluprovodnikov. 1987, Vol 21, Num 4, pp 615-619, issn 0015-3222Article

Time-resolved microwave conductivity (TRMC): photoeffects at semiconductor/electrolyte interfacesKUNST, M; BECK, G; TRIBUTSCH, H et al.Journal of the Electrochemical Society. 1984, Vol 131, Num 4, pp 954-956, issn 0013-4651Article

Etude des cellules photoélectrochimiques stabilisées par un couple redox : cinétique de transfert et rôle des états d'interface = A study of photoelectrochemical cells with stabilization by a redox couple: the transfer kinetics and interface states effectsALLONGUE, Philippe.1984, 58 p.-plThesis

L'interface semiconducteur-électrolyte, école d'hiver, Aussois, 9-15 décembre 1984L'interface semiconducteur-électrolyte. Ecole d'hiver. 1984, 481 p.Conference Proceedings

Capacité d'interface et potentiel de bandes plates de CdIn₂Se₄ et CdCr₂Se₄ = Interface capacity and flat-band potential of CdIn₂Se₄ and CdCr₂Se₄SAVADOGO, O; YAZBECK, J; DESCHANVRES, A et al.Annales de chimie (Paris. 1914). 1984, Vol 9, Num 2, pp 145-152, issn 0151-9107Article

Sud-band-gap photoresponse of TiO_2-x thin-film―electrolyte interfaceWHA-TEK KIM; CHANG-DAE KIM; WON CHOI, Q et al.Physical review. B, Condensed matter. 1984, Vol 30, Num 7, pp 3625-3628, issn 0163-1829Article

Photoinduced surface charge diatribution on TiO₂JARRETT, H. S.Physical review letters. 1985, Vol 54, Num 3, pp 217-219, issn 0031-9007Article

Cadmium selenide interface states studied by electrochemical photocapacitance spectroscopyHAAK, R; TENCH, D.Journal of the Electrochemical Society. 1984, Vol 131, Num 6, pp 1442-1444, issn 0013-4651Article

The role of the anion electronegativity in semiconductor-electrolyte and semiconductor-metal junctionsSCULFORT, J.-L; GAUTRON, J.The Journal of chemical physics. 1984, Vol 80, Num 8, pp 3767-3773, issn 0021-9606Article

Electrolyte-semiconductor junctions in the case of p-type II-VI alloys with common telluride anionLEMASSON, P.Solid state communications. 1983, Vol 48, Num 5, pp 411-415, issn 0038-1098Article